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| BF 720, BF 722 NPN High Voltage Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage Power dissipation - Verlustleistung 1.65 4 0.2 0.3 6.5 0.1 3 0.2 1.5 W SOT-223 0.04 g Plastic case Kunststoffgehause 3.5 Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Mae in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Peak Collector current - Kollektor-Spitzenstrom Peak Base current - Basis-Spitzenstrom Junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open 7 Grenzwerte (TA = 25/C) BF 720 VCE0 VCB0 VEB0 Ptot IC ICM IBM Tj TS 300 V 300 V 5V 1.5 W 1) 100 mA 200 mA 100 mA 150/C - 65...+ 150/C BF 722 250 V 250 V Characteristics (Tj = 25/C) Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 200 V IE = 0, VCB = 200 V, Tj = 150/C Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 5 V IC = 30 mA, IB = 5 mA IEB0 VCEsat - - ICB0 ICB0 - - Kennwerte (Tj = 25/C) Typ. - - - - Max. 10 nA 10 :A 50 nA 600 mV Collector saturation volt. - Kollektor-Sattigungsspg. 2) ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 10 01.11.2003 1 High Voltage Transistors Characteristics (Tj = 25/C) Min. DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 20 V, IC = 25 mA Gain-Bandwidth Product - Transitfrequenz VCE = 20 V, IC = 25 mA, f = 100 MHz VCB = 30 V, IE = ie = 0, f = 1 MHz Thermal resistance - Warmewiderstand junction to ambient air - Sperrschicht zu umgebender Luft junction to soldering point - Sperrschicht zu Lotpad Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren RthA RthS fT CCB0 50 MHz - - - hFE 50 - BF 820, BF 822 Kennwerte (Tj = 25/C) Typ. Max. - - 1.6 pF 87 K/W 2) 27 K/W Collector-Base Capacitance - Kollektor-Basis-Kapazitat BF 721, BF 723 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 01.11.2003 1 2 11 |
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